Theoretical study on the temperature-induced structural transition of the Si(113) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
1. Equilibrium shape of Si
2. Surface-structure and work-function determinations for Silicon crystals
3. Atomic structure of Si and Ge surfaces: Models for (113), (115), and stepped (001) vicinal surfaces
4. Structure of Si(113) determined by scanning tunneling microscopy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structure of domain boundaries: group IV elements and IV–IV compounds: Si;Physics of Solid Surfaces;2018
2. Influence of temperature on the controlled growth kinetics and superstructural phase formation of indium on a reconstructed Si (113) 3 × 2 surface;Materials Research Express;2014-02-26
3. Anisotropic growth of titanium disilicide nanocrystals on Si(113) surface;Surface Science;2012-04
4. STM study of Si(113) 3×2-Ga surface;Surface Science;2009-05
5. Calculation of surface core-level shifts within complete screening: Problems with pseudohydrogenated slabs;Physical Review B;2008-06-02
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