Reaction mechanisms of oxygen at SiO2/Si(100) interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference32 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates
3. Photoluminescence mechanism in surface-oxidized silicon nanocrystals
4. Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation
5. Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process
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