First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence-Reference-Cited by-同舟云学术

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First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence

Published:2015-11 Issue: Volume:641 Page:174-179
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Akiyama Toru,Ito Ayako,Nakamura Kohji,Ito Tomonori,Kageshima Hiroyuki,Uematsu Masashi,Shiraishi Kenji

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference39 articles.

1. Intrinsic SiC/SiO2 Interface States

2. Oxidation of Single‐Crystal Silicon Carbide: Part I . Experimental Studies

3. Thermal Oxidation and Electrolytic Etching of Silicon Carbide

4. Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure

5. Comparative oxidation studies of SiC(0001̄) and SiC(0001) surfaces

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1. SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control;Defect and Diffusion Forum;2024-08-22

2. Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP);Ceramics International;2024-04

3. Reaction of NO molecule at 4H-SiC/SiO₂ interface and its orientation dependence: a first-principles study;Japanese Journal of Applied Physics;2024-03-01

4. First-principles study for orientation dependence of band alignments at the 4H-SiC/SiO₂ interface;Japanese Journal of Applied Physics;2024-01-25

5. First-principles study on silicon emission from interface into oxide during silicon thermal oxidation;Materials Science in Semiconductor Processing;2023-08

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