Direct molecular dynamics simulation of Ge deposition on amorphous SiO2 at experimentally relevant conditions-Reference-Cited by-同舟云学术

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Direct molecular dynamics simulation of Ge deposition on amorphous SiO2 at experimentally relevant conditions

Published:2015-11 Issue: Volume:641 Page:112-120
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Chuang Claire Y.,Zepeda-Ruiz Luis A.,Han Sang M.,Sinno Talid

Funder

National Science Foundation

XSEDE

US Department of Energy by Lawrence Livermore National Laboratory

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference66 articles.

1. High performance, waveguide integrated Ge photodetectors

2. High-performance Ge-on-Si photodetectors

3. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

4. High-k/Ge MOSFETs for future nanoelectronics

5. Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On coarse projective integration for atomic deposition in amorphous systems;The Journal of Chemical Physics;2015-10-07

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