Initial adsorption of O2 on Si(100): Non-adiabaticity originating both from a discrete and a continuous set of electronic excitations

Author:

Hellman A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference35 articles.

1. S.F. Bent, in: Anders Nilsson, Lars G.M. Pettersson, Jens K. Nørskov, (Eds.), Chemical Bonding at Surfaces and Interfaces, 2007, pp. 323–395.

2. The drive to miniaturization

3. The interaction of molecular and atomic oxygen with Si(100) and Si(111)

4. Oxygen adsorption on Si(100)-2×1 via trapping-mediated and direct mechanisms

5. Effects of Strain on the Dissociation Dynamics ofO2on Si(001)

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1. Oxidation of Liquid Silicon in Air Atmospheres Containing Water Vapor;Industrial & Engineering Chemistry Research;2019-03-25

2. Oxygen adsorption on surfaces studied by a spin- and alignment-controlled O 2 beam;Progress in Surface Science;2016-02

3. Stereodynamics in O2 Adsorption on Si(100);Journal of the Vacuum Society of Japan;2015

4. Intitial Oxidation of Si(100) Surface at Cryogenic Temperature;The Journal of Physical Chemistry C;2013-09-11

5. Huge steric effects in surface oxidation of Si(100);Physical Review B;2012-04-19

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