A real-time investigation by RHEED of the homoepitaxial growth of GaAs on (001) oriented surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. B.A. Joyce, D.D. Vvedensky, Mat. Sci. & Eng. R46 (2004) 127, and references therein.
2. Long-range disorder effects on the GaAs(001) β2(2×4) surface
3. Nucleation and Growth of Islands on GaAs Surfaces
4. Atomic Structure of theGaAs(001)−(2×4)Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory
5. B.A. Joyce, J.H. Neave, J. Zhang and P.J. Dobson, in: Proc. NATO ARW on RHEED and Reflection Electron Imaging of Surfaces, P.K. Larsen and P.J. Dobson (Eds.), Plenum, Series B, Physics, vol. 188, 1988, p. 397, and references therein.
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2. First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2 × 2) surface;Japanese Journal of Applied Physics;2016-07-19
3. Hopkins-Skellam index and origin of spatial regularity in InAs quantum dot formation on GaAs(001);Journal of Applied Physics;2015-04-14
4. Origin of Reflection High Energy Electron Diffraction Intensity Oscillation during Homoepitaxial Growth on GaAs(001);Journal of the Physical Society of Japan;2011-06-15
5. Analytic many-body potential for GaAs(001) homoepitaxy: Bulk and surface properties;Physical Review B;2011-05-31
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