Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference38 articles.
1. Epitaxy of Nanostructures;Shchukin,2003
2. Structural properties of self-organized semiconductor nanostructures
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4. Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si–Ge nanostructures
5. Local Strain-Mediated Chemical Potential Control of Quantum Dot Self-Organization in Heteroepitaxy
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1. Molecular Dynamics Simulations of Packing Structures and Local Stress in the Ge(100)/Si(110) Interface at Atomic Scale;Nano;2023-01
2. Center Atom Model for Strain Mapping of Void and Crack of Atomic Lattice Image;Crystal Research and Technology;2022-08-03
3. Comment on “Thermodynamic Self-Limiting Growth of Heteroepitaxial Islands Induced by Nonlinear Elastic Effect”;Nano Letters;2017-02-10
4. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots;Zeitschrift für Physikalische Chemie;2016-12-08
5. Thermodynamic Self-Limiting Growth of Heteroepitaxial Islands Induced by Nonlinear Elastic Effect;Nano Letters;2016-05-26
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