Negative cluster emission in sputtering of Si1−xGex alloys: A full spectrum approach
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference22 articles.
1. Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1−xGex alloy layers
2. Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation
3. Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O2+
4. Proceedings of the 12th International conference on Secondary Ion Mass Spectrometry;Dong,1999
5. SIMS quantification of Si1?xGex alloys using polyatomic secondary ions
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