Temperature-dependent nucleation and capture-zone scaling of C60 on silicon oxide-Reference-Cited by-同舟云学术

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Temperature-dependent nucleation and capture-zone scaling of C60 on silicon oxide

Published:2012-01 Issue:1-2 Volume:606 Page:53-56
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Groce M.A.,Conrad B.R.,Cullen W.G.,Pimpinelli A.,Williams E.D.,Einstein T.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference36 articles.

1. Ambipolar Blends of Cu-Phthalocyanine and Fullerene: Charge Carrier Mobility, Electronic Structure and their Implications for Solar Cell Applications

2. Substrate-dependent interface composition and charge transport in films for organic photovoltaics

3. Structural Complexities in the Active Layers of Organic Electronics

4. Effects of polymorphism on charge transport in organic semiconductors

5. Resistivity of single crystal C60 and effect of oxygen

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1. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures;Journal of Crystal Growth;2024-12

2. Capture Zone Scaling in 2d Ge Island Nucleation on Si(111)-(7×7) at Elevated Temperatures;2024

3. Structure Formation of C ₆₀ on Insulating CaF ₂ Substrates: Matching Experiments with Simulations;Advanced Materials Interfaces;2022-10-10

4. Multiscale modeling of structure formation of C60 on insulating CaF2 substrates;The Journal of Chemical Physics;2021-06-21

5. Self-organization of vapor-deposited polyolefins at the solid/vacuum interface;Progress in Organic Coatings;2020-06

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