First principle simulations of the surface diffusion of Si and Me adatoms on the Si(111) Al, Ga, In, Pb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference30 articles.
1. Direct determination of surface diffusion by displacement distribution measurement with scanning tunneling microscopy
2. Direct measurement of diffusion by hot tunneling microscopy: Activation energy, anisotropy, and long jumps
3. Exchanges between group-III (B, Al, Ga, In) and Si atoms on Si(111)-3×3surfaces
4. Exchanges between Si and Pb adatoms on Si(111)
5. Adatom diffusion by orchestrated exchange on semiconductor surfaces
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