Preparation of stoichiometric GaN(0001)-1×1 studied with spectromicroscopy-Reference-Cited by-同舟云学术

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Preparation of stoichiometric GaN(0001)-1×1 studied with spectromicroscopy

Published:2004-11 Issue:2-3 Volume:572 Page:409-417
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Widstrand S.M.,Magnusson K.O.,Larsson M.I.,Johansson L.S.O.,Gustafsson J.B.,Moons E.,Yeom H.W.,Miki H.,Oshima M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference34 articles.

1. The Materials Research Society Internet Journal of Nitride Semiconductor Research (MIJ-NSR). URL: Available from

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

4. Fundamental energy gap of GaN from photoluminescence excitation spectra

5. Physical Properties of Bulk GaN Crystals Grown by HVPE

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1. PHOTOELECTRON SPECTROSCOPY STUDIES ON Al2O3 FILMS ON p-GaN(0001);Surface Review and Letters;2021-06-30

2. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09

3. An investigation of thin Zr films on 6H-SiC(0001) and GaN(0001) surfaces by XPS, LEED, and STM;Applied Physics A;2016-03-07

4. Oxidation of GaN(0001) by low-energy ion bombardment;Applied Surface Science;2014-06

5. Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN;Applied Physics Letters;2011-02-21

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