Ultra-thin Si overlayers on the TiO2 (110)-(1×2) surface: Growth mode and electronic properties-Reference-Cited by-同舟云学术

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Ultra-thin Si overlayers on the TiO2 (110)-(1×2) surface: Growth mode and electronic properties

Published:2006-07 Issue:13 Volume:600 Page:2696-2704
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Abad J.,Rogero C.,Méndez J.,López M.F.,Martín-Gago J.A.,Román E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference58 articles.

1. Leakage current and electrical breakdown in metal‐organic chemical vapor deposited TiO2 dielectrics on silicon substrates

2. Structural and electrical characterization of TiO2 grown from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O ambients

3. Titania–silica as catalysts: molecular structural characteristics and physico-chemical properties

4. Electronic interactions at SiO2/M′O (M′: Al, Ti) oxide interfaces

5. Spectroscopic characterization of quantum-sized TiO2 supported on silica: influence of size and TiO2-SiO2 interface composition

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1. Interaction of NO with SiOx/TiO2 (1 1 0)-(1 × 2);Applied Surface Science;2021-06

2. Effect of vanadium admixing on the surface structure of TiO2(110) under non-oxidizing conditions;Surface Science;2016-11

3. Electronically Passivated Hole-Blocking Titanium Dioxide/Silicon Heterojunction for Hybrid Silicon Photovoltaics;Advanced Materials Interfaces;2016-05-04

4. Structure of Clean and Adsorbate-Covered Single-Crystal Rutile TiO2 Surfaces;Chemical Reviews;2013-05-15

5. Valence band electronic structure characterization of the rutile TiO2 (110)-(1×2) reconstructed surface;Surface Science;2013-02

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