Influence of argon gas pressure on the crystallinity of α-SiC epitaxial films fabricated by Nd:YAG pulsed-laser deposition-Reference-Cited by-同舟云学术

Influence of argon gas pressure on the crystallinity of α-SiC epitaxial films fabricated by Nd:YAG pulsed-laser deposition

Published:2003-07 Issue:1-2 Volume:23 Page:55-60
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Kusumori Takeshi,Muto Hachizo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference8 articles.

1. N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino, H. Matsunami, Ext. Abstr. 19th Conference on Solid State Devices and Materials, 1987, p. 227

2. Step-Controlled Epitaxial Growth of SiC

3. Low-Temperature Preparation of α-SiC Epitaxial Films by Nd: YAG Pulsed-Laser Deposition

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