Origin of lateral photovoltage in hydrogenated amorphous silicon and silicon germanium thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Lateral photoeffect in large area one‐dimensional thin‐film position‐sensitive detectors based in a‐Si:H P‐I‐N devices
2. New ultra-light flexible large area thin film position sensitive detector based on amorphous silicon
3. Amorphous silicon p–i–n on p crystalline silicon photodetector in the visible and near infrared spectrum
4. Photoeffects in Nonuniformly Irradiated p‐n Junctions
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Integrated properties of large lateral photovoltage and positive magnetoresistance in Co/Mn/Co/c-Si structures;Journal of Physics D: Applied Physics;2008-02-08
2. Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films;Journal of Non-Crystalline Solids;2005-03
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