Image capture devices based on p–i–n silicon carbides for biometric applications-Reference-Cited by-同舟云学术

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Image capture devices based on p–i–n silicon carbides for biometric applications

Published:2002-04 Issue: Volume:299-302 Page:1245-1249
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Vieira M.,Fernandes M.,Louro P.,Vygranenko Y.,Fantoni A.,Schwarz R.,Schubert M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. The scanistor—A solid-state image scanner

2. Improved Resolution in A P-I-N Image Sensor by Changing the Structure of the Doped Layers

3. Laser-scanned p-i-n photodiode (LSP) for image detection

4. Tailored Laser scanned photodiodes (LSP) for image recognition

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3. Reviewing Photo-sensing Devices Using a-SiC Based Materials;MRS Proceedings;2010

4. Modeling a-SiC:H Tandem Pinpin and Pinip Photodiodes for Color Sensor Application;Journal of Nanoscience and Nanotechnology;2009-07-01

5. Pinpi'n and Pinpii'n Multilayer Devices with Voltage Controlled Optical Readout;Journal of Nanoscience and Nanotechnology;2009-07-01

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