a-Si:H/c-Si heterostructures prepared by 55 kHz glow discharge high-rate deposition technique-Reference-Cited by-同舟云学术

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a-Si:H/c-Si heterostructures prepared by 55 kHz glow discharge high-rate deposition technique

Published:1998-05 Issue: Volume:227-230 Page:1123-1126
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Budaguan B.G.,Sherchenkov A.A.,Chernomordic V.D.,Biriukov A.V.,Ljungberg L.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. The Stability Improvement of a-Si:H Films for Photovoltaic Applications

2. J. Perrin, Plasma Deposition of Amorphous Silicon-Based Materials, in: G. Bruno, P. Capezzuto, A. Madan (Eds.), Academic Press, San Diego, 1995, pp. 177–241.

3. T. Sawada, N. Terada, S. Tsuge, T. Bata, T. Takahama, K. Wakisaka, S. Tsuda, S. Nakano, Proc. 1st World Conf. on Photov. Energy Conv., December 1994, HI.

4. The use of amorphous‐crystalline silicon heterojunctions for the application to an imaging device

5. The current transport mechanism of p-type aSi:H/n-type cSi heterojunctions and their application to an imaging device

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