Influence of polycide deposition on the reliability of wet and nitrided oxides-Reference-Cited by-同舟云学术

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Influence of polycide deposition on the reliability of wet and nitrided oxides

Published:1999-04 Issue:1-3 Volume:245 Page:97-103
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Yckache K,Boivin P,Baiget F,Kristukat C,Auriel G,Sagnes B,Oualid J,Glachant A

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Influence of FN electron injections in dry and dry/wet/dry gate oxides: Relation with failure

2. Correlation between two dielectric breakdown mechanisms in ultra‐thin gate oxides

3. Trapping and trap creation studies on nitrided and reoxidized‐nitrided silicon dioxide films on silicon

4. Electrical Characterization of Highly Reliable 8 nm Oxide

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of nitridation on Fowler-Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate;Journal of Materials Science: Materials in Electronics;2001

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