A study on the correlation between the photoinduced volume expansion and the internal stress in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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A study on the correlation between the photoinduced volume expansion and the internal stress in hydrogenated amorphous silicon

Published:2000-05 Issue: Volume:266-269 Page:481-485
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Sakamoto T,Yoshida N,Harada H,Kishida T,Nonomura S,Gotoh T,Kondo M,Matsuda A,Itoh T,Nitta S

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Reversible conductivity changes in discharge‐produced amorphous Si

2. H. Dersch et al., Phys. Stat. Sol. B, 105 (1981) 265

3. Annealing of metastable defects in hydrogenated amorphous silicon

4. Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon

5. Changes of infrared absorption by light soaking and thermal quenching in a-Si : H

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