Pulsed laser crystallization and structuring of a-Ge on GaAs-Reference-Cited by-同舟云学术

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Pulsed laser crystallization and structuring of a-Ge on GaAs

Published:2002-04 Issue: Volume:299-302 Page:137-142
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Santos Paulo V,Zanatta A.R,Dondeo F,Trampert A,Jahn U,Comedi D,Pudenzi M.A.A,Chambouleyron I

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Structural phase transition in (GaAs)1−xGe2xand (GaP)1−xSi2xalloys: Test of the bulk thermodynamic description

2. F. Dondeo, P.V. Santos, M. Ramsteiner, D. Comedi, M.A.A. Pudenzi, I. Chambouleyron, Braz. J. Phys., in press

3. Epitaxial Ge/GaAs heterostructures by scanned cw laser annealing ofa‐Ge layers on GaAs

4. Epitaxial regrowth of Ge films on (001) GaAs byin situthermal pulse annealing of evaporated amorphous germanium

5. Lateral structuring of silicon thin films by interference crystallization

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium: Epitaxy and its applications;Progress in Crystal Growth and Characterization of Materials;2010-09

2. Laser-induced amorphization and crystallization on Se80Te20−xPbx thin films;Vacuum;2003-11

3. Chapter 4 Laser Interference Crystallization of Amorphous Films;Semiconductors and Semimetals;2003

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