Light-induced defects in phosphorus-doped hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Light-induced defects in phosphorus-doped hydrogenated amorphous silicon

Published:1992-01 Issue: Volume:141 Page:176-187
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Okushi Hideyo,Yamasaki Satoshi,Tanaka Kazunobu

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Intrinsic dangling-bond density in hydrogenated amorphous silicon

2. Thermal-equilibrium processes in amorphous silicon

3. Amorphous Silicon and Related Materials;Kakalios,1988

4. Amorphous Silicon and Related Materials;Smith,1988

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical activity of doped phosphorus atoms in (001) n-type diamond;physica status solidi (a);2008-09

2. Nitrogen-Doping Effects on Electrical Properties of Hydrogenated Microcrystalline Silicon as Studied by Electron Paramagnetic Resonance and Conductivity;Japanese Journal of Applied Physics;2000-01-15

3. Direct Evidence of Phosphorus-Defect Complexes inn-Type Amorphous Silicon and Hydrogenated Amorphous Silicon;Physical Review Letters;1999-05-10

4. Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon;Applied Physics Letters;1996-04-22

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