Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx-Reference-Cited by-同舟云学术

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Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx

Published:2001-02 Issue:1-3 Volume:280 Page:69-77
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Pic N.,Glachant A.,Nitsche S.,Hoarau J.Y.,Goguenheim D.,Vuillaume D.,Sibai A.,Autran J.-L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Recent developments in Ultra thin oxynitride gate dielectrics

2. Determination of the electrical properties of thermally grown ultrathin nitride films

3. Suppression of Charge Carrier Tunneling through Organic Self-Assembled Monolayers

4. Organic insulating films of nanometer thicknesses

5. Structure of Si(111) surfaces etched in 40% NH4F: Influence of the doping

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1. Imaging at the Nanoscale;Characterization of Semiconductor Heterostructures and Nanostructures;2013

2. Effect of Long Range Interactions on the Glass Transition Temperature of Thin Polystyrene Films;ACS Macro Letters;2012-10-25

3. Study of the dielectric properties near the band gap by VEELS: gap measurement in bulk materials;Ultramicroscopy;2003-09

4. Capacitance analysis for a metal-insulator- semiconductor structure with an ultra-thin oxide layer;Applied Physics A: Materials Science & Processing;2003-01-01

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