Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal

Author:

Li YudongORCID,Liu Bingkai,Wen Lin,Wei Ying,Zhou Dong,Feng Jie,Guo Qi

Publisher

Elsevier BV

Subject

Radiation

Reference20 articles.

1. Total ionizing dose effects in shallow trench isolation oxides;Faccio;Microelectron. Reliab.,2008

2. Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices;Fleetwood;IEEE Trans. Nucl. Sci.,2013

3. Radiation effects in CMOS isolation oxides: differences and similarities with thermal oxides;Gaillardin;IEEE Trans. Nucl. Sci.,2013

4. Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology;Goiffon;IEEE Trans. Electron. Dev.,2009

5. Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements;Goiffon;IEEE Trans. Nucl. Sci.,2010

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