Characterization of a power bipolar transistor as high-dose dosimeter for 1.9–2.2MeV electron beams
Author:
Publisher
Elsevier BV
Subject
Radiation
Reference27 articles.
1. Comparison of gold, platinum and electron irradiation for controlling lifetime in power rectifiers;Baliga;IEEE Trans. Electron Devices, ED,1977
2. Separation of ionisation and displacement damage using gate-controlled lateral PNP bipolar transistors;Ball;IEEE Trans. Nucl. Sci.,2002
3. Electronic dosimeters based on solid state detectors;Barthe;Nucl. Instrum. Methods B,2001
4. Defects produced in silicon by high energy electron and gamma irradiation and their effects upon recombination lifetime;Brotherton,1981
5. Lifetime control in silicon power devices by electron or gamma irradiation;Carlson;IEEE Trans. Electron Devices, ED,1977
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