Defects in silicon introduced by helium implantation and subsequent annealing-Reference-Cited by-同舟云学术

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Defects in silicon introduced by helium implantation and subsequent annealing

Published:2011-10 Issue:10 Volume:80 Page:1099-1103
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Capan I.,Bak-Misiuk J.,Pivac B.,Dubček P.,Misiuk A.,Bernstorff S.,Romanowski P.

Publisher

Elsevier BV

Subject

Radiation

Reference19 articles.

1. High-flux beamline for small-angle X-ray scattering at ELETTRA;Amenitsch;Rev. Sci. Instrum.,1995

2. GISAXS study of cavities and {113} defects induced by neon and helium implantation in silicon;Babonneau;J. Appl. Cryst.,2007

3. The structures prepared by high temperature–pressure treatment of Cz-Si heavily implanted with He;Bak-Misiuk;J. Alloys Compd.,2005

4. He-implantation induced defects in Si studied by slow positron annihilation spectroscopy;Brusa;J. Appl. Phys.,1999

5. Radiation Effects in Advanced Semiconductor Materials and Devices;Claeys,2002

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructural evolution and properties of He-charged a-Si coatings prepared by magnetron sputtering;Applied Surface Science;2024-01

2. Structural evolution of thermal annealed Si(0 0 1) surface layers fabricated by plasma immersion He + implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-09

3. Helium Bubbles Formed in Si(001) Layers after High-Dose Implantation and Thermal Annealing;Russian Microelectronics;2018-05

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