Enhancing radiation-hardness of Si-based diodes: An investigation of Al-doping effects in Si using I

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Enhancing radiation-hardness of Si-based diodes: An investigation of Al-doping effects in Si using I–V measurements

Published:2024-10 Issue: Volume:223 Page:111873
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Oeba D.A.,Bodunrin J.O.^ORCID,Moloi S.J.

Funder

NRF

Publisher

Elsevier BV

Reference33 articles.

1. Electrical properties and conduction mechanism of heavily implanted iron;Bodunrin;Solid State Commun.,2022

2. Current-voltage characteristics of iron-implanted silicon based Schottky diodes;Bodunrin;Mater. Sci. Semicond. Process.,2020

3. Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon;Casse;IEEE Trans. Nucl. Sci.,2000

4. Energy levels in silicon;Chen;Annu. Rev. Mater. Sci.,1980

5. Gold and platinum doped radiation resistant silicon diode detectors;Dixon;Radiat. Protect. Dosim.,1986

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