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EPR of γ-induced defects and their effects on the photoluminescence in the glasses of the Ag0.05Ga0.05Ge0.95S2–Er2S3 system

  • Published:2015-10 Issue: Volume:115 Page:189-195
  • ISSN:0969-806X
  • Container-title:Radiation Physics and Chemistry
  • language:en
  • Short-container-title:Radiation Physics and Chemistry

Author:

Halyan V.V.,Konchits A.A.,Shanina B.D.,Krasnovyd S.V.,Lebed O.O.,Kevshyn A.H.,Shevchuk M.V.,Bodnaruk A.V.,Yukhymchuk V.O.

Funder

Project of Ministry Education and Science of Ukraine

Project of NAS of Ukraine

Publisher

Elsevier BV

Subject

Radiation

Reference21 articles.

1. Physical Values: Handbook;Babichev,1991

2. Gamma ray irradiation induced optical band gap variations in chalcogenide glasses;Xia;Nucl. Instrum. Methods B,2005

3. EPR of γ-induced paramagnetic centers in tellurite glasses;Giehl;J. Non-Cryst. Solids,2010

4. Trapped-electron centers in pure and doped glassy silica: a review and synthesis;Griscom;J. Non-Cryst. Solids,2011

5. Photoluminescence in Er-doped AgGaS2–GeS2 glasses;Halyan;Phys. Status Solidi C,2009

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