Microscopic (AFM) and resonant photoemission study of Gd/Si(111) interface-Reference-Cited by-同舟云学术

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Microscopic (AFM) and resonant photoemission study of Gd/Si(111) interface

Published:2009-10 Issue:10 Volume:78 Page:S22-S24
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Orlowski B.A.,Kowalski B.J.,Guziewicz E.,Lusakowska E.,Osinniy V.,Kowalik I.A.,Pietrzyk M.A.,Nossarzewska-Orlowska E.,Johnson R.L.

Publisher

Elsevier BV

Subject

Radiation

Reference11 articles.

1. Effects of configuration interaction on intensities and phase shifts;Fano;Phys. Rev.,1961

2. Photoemission study of Gd atoms on CdTe surface;Guziewicz;Appl. Surf. Sci.,2000

3. 4f shell of Gd2+ and Gd3+ ions in Sn1−xGdxTe-resonant photoemission study;Kowalski;Acta Phys. Pol., A,1997

4. Nature of resonant photoemission in Gd;Mishra;Phys. Rev. Lett.,1998

5. Surface and coatings technology: effect of substrate bias voltage;Molnar;J. Appl. Phys.,1988

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ELECTRONIC AND STRUCTURAL PROPERTIES OF Si–Gd–O ELECTRON EMITTER;Surface Review and Letters;2019-03-22

2. Influence of Changes in Defect States on the Properties of Si–Gd–O Photocathode;Ukrainian Journal of Physics;2017-09

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