Influence of the ion irradiation on the properties of β-FeSi2 layers prepared by ion beam assisted deposition
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Transformation Mechanisms of the α⇆β Transition in FeSi2
2. Optical properties of semiconducting iron disilicide thin films
3. A clarification of the index of refraction of beta‐iron disilicide
4. Electronic properties of semiconducting FeSi2films
5. Optical properties and phase transformations in α and β iron disilicide layers
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1. Comprehensive electrical characterization and theoretical analysis of Mn and As doped β-FeSi2 through DFT: A promise to rectification and photovoltaic applications;Journal of Applied Physics;2023-07-11
2. Theoretical approach to embed nanocrystallites into a bulk crystalline matrix and the embedding influence on the electronic band structure and optical properties of the resulting heterostructures;Journal of Physics: Condensed Matter;2018-05-22
3. Microstructure of β-FeSi2 buried layers synthesis by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-02
4. The optical properties of β-FeSi2 fabricated by ion beam assisted sputtering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
5. Transport Properties;Semiconducting Silicides;2000
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