Author:
Herre O.,Wendler E.,Achtziger N.,Licht T.,Reislöhner U.,Rüb M.,Bachmann T.,Wesch W.,Gaiduk P.I.,Komarov F.F.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
7 articles.
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1. Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs;Journal of Applied Physics;2022-08-28
2. High-energy Au implantation of GaAs at 16K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
3. Ionisation stimulated defect annealing in GaAs and InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
4. High resolution XRD study of GaAs implanted with 50 MeV 120Sn ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-12
5. Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-10