Lattice disorder distribution and recovery in Hg implanted TiO2
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Formation of amorphous layers in Al2O3 by ion implantation
2. Ion implantation of low melting point metals into sapphire
3. Recovery stages inUO2at low temperatures
4. Damage recovery in the U-sublattice of ion implanted UO2between 5 K and 2000 K
5. Criteria for bombardment-induced structural changes in non-metallic solids
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3. Effects of Xe-ion irradiation at high temperature on single crystal rutile;Journal of Nuclear Materials;2002-12
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5. Retraction of: Ion-beam-induced structural changes in MgAl2O4and TiO2;Journal of Electron Microscopy;2002-03-27
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