Identification of substitutional and interstitial Co implanted in Si-Reference-Cited by-同舟云学术

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Identification of substitutional and interstitial Co implanted in Si

Published:1987-01 Issue: Volume:19-20 Page:322-324
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Langouche G.,De Potter M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Transition metals in silicon

2. Mössbauer study of the microscopic surrounding of co atoms implanted in si and ge below the full amorphization limit

3. Observation of Co-Dimer Formation during Thermal Annealing of Co-Implanted Si

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1. Nuclear Methods to Study Defects and Impurities in Si Materials;Defects and Impurities in Silicon Materials;2015

2. Origin of the lattice sites occupied by implanted Co in Si;Semiconductor Science and Technology;2014-11-13

3. Hyperfine electric parameters calculation in Si samples implanted with;Physica B: Condensed Matter;2014-07

4. First-principles calculations of hyperfine parameters of iron mechanically alloyed with Mo, Al, Si, or Mg;Bulletin of the Russian Academy of Sciences: Physics;2013-06

5. Ion Implantation;Mössbauer Spectroscopy;2012-11-09

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