Author:
Venkatraman S.,Nair M.R.,Kothari D.C.,Lal K.B.,Raman R.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
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3. The Use of Rutherford Backscattering to Study the Behavior of Ion-Implanted Atoms During Anodic Oxidation of Aluminum: Ar, Kr, Xe, K, Rb, Cs, Cl, Br, and l
4. Mobility of Metallic Foreign Atoms during the Anodic Oxidation of Aluminum
5. The Morphology of Anodic Films Formed on Aluminium in Oxalic Acid
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