Time resolved photoluminescence in keV proton irradiated a-SiC:H alloys-Reference-Cited by-同舟云学术

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Time resolved photoluminescence in keV proton irradiated a-SiC:H alloys

Published:2000-05 Issue: Volume:166-167 Page:426-430
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Baeri A.,Reitano R.,Malvezzi A.M.,Arena C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. The electronic and atomic structure of hydrogenated amorphous Si—C alloys

2. Photoluminescence characterization ofa-Si1−xCx:H alloys prepared by cosputtering

3. Optical dispersion relations for amorphous semiconductors and amorphous dielectrics

4. J. Tauc, in: S. Nudelman, S.S. Mitra (Eds.), Optical Properties of Solids, Plenum Press, New York, p. 123

5. Luminescence quenching in 150 keV proton irradiated a-SiC:H

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVD;Journal of Non-Crystalline Solids;2006-06

2. Time-resolved studies of photoluminescence from proton irradiated and thermally annealed a-SiC:H alloys;SPIE Proceedings;2001-12-27

3. Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65:H alloys: A phenomenological model;Journal of Applied Physics;2001-07-15

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