Ion beam effects on the hydrogenated bonds of amorphous silicon carbide
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. Chemical (dis)order in a-Si1−xCx:H for x<0.6
2. Properties and structure ofa‐SiC:H for high‐efficiencya‐Si solar cell
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4. Physics of low density-of-states a-Si1−xCx films
5. On the differences between a-SiC:H films deposited with and without fluorine
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