Measurements of Si ion stopping in amorphous silicon-Reference-Cited by-同舟云学术

Measurements of Si ion stopping in amorphous silicon

Published:2002-05 Issue:1-4 Volume:190 Page:84-88
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Whitlow Harry J.,Timmers Heiko,Elliman Robert G.,Weijers Tessica D.M.,Zhang Yanwen,Uribastera Juan,John O'Connor D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. Ranges and electronic stopping powers of 1–20 MeV 28Si ions in Si targets as obtained from optical reflectivity measurements on bevelled samples

2. An experimental method for precise determination of electronic stopping powers for heavy ions

3. H. Paul, http://www2.uni-linz.ac.at/fak/TNF/atomphys/STOPPING/welcome.htm

4. Measurements of the mean energy-loss of swift heavy ions in carbon with high precision

5. ICRU, Stopping Powers and Ranges for Protons and Alpha Particles, Vol. 49, ICRU, International Commission on Radiation Units and Measurements, Bethesda, MD, 1994

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