Ion beam analysis of ion-assisted deposited amorphous GaN
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices
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5. Optical properties of amorphous indium nitride films and their electrochromic and photodarkening effects
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