Impact of high energy ion implantation on dopant distribution in silicon-Reference-Cited by-同舟云学术

Impact of high energy ion implantation on dopant distribution in silicon

Published:1998-12 Issue:1-4 Volume:146 Page:323-328
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Neustroev E.P,Antonova I.V,Obodnikov V.I,Popov V.P,Skuratov V.A,Smagulova S.A,Didyk A.Yu

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. J.O. Borland. in: Proceedings of the 10th International Conference on Ion Implantation Technology, Italy, 1994, p. 950

2. R. Koegler, D. Panknin, W. Skopura, P. Werner, A. Danilin in: Proceedings of the 12th International Conference on Ion Implantation Technology, USA, 1996, p. 697

3. Localized lifetime control in insulated-gate transistors by proton implantation

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