Analysis on UV-irradiated and `as grown' silica sample with synchrotron radiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference30 articles.
1. Photoluminescence Centers in VAD SiO2Glasses Sintered under Reducing or Oxidizing Atmospheres
2. ArF-excimer-laser-induced emission and absorption bands in fused silica synthesized under oxidizing conditions
3. ESR and PL centers induced by gamma rays in silica
4. Spectral and kinetic properties of the 4.4-eV photoluminescence band ina-SiO2: Effects ofγirradiation
5. Formation of photosensitive materials by ion implantation of oxygen ions in silica
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2. X-ray excited 3.2 eV luminescence from amorphous silica: radiative electron relaxation through an unidentified centre and its thermal switching;Journal of Physics: Condensed Matter;2008-05-28
3. Effects of B and N implantation on optical absorption and photoluminescence and comparison to the effects of implanting Si, Ge, O, and Ar in silica;Journal of Non-Crystalline Solids;2005-07
4. XAFS Study on Silica Glasses Irradiated by HighEnergy Particles;Physica Scripta;2005
5. Photoluminescence and absorption in multi-energy Ge implanted type III silica;Journal of Non-Crystalline Solids;2004-10
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