On carbon nitride synthesis at high-dose ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. Formation and bonding structure of silicon nitride by 20‐keV N+ion implantation
2. Structural properties and electronic structure of low-compressibility materials: β-Si3N4and hypothetical β-C3N4
3. Structure and bonding studies of the C:N thin films produced by rf sputtering method
4. Carbon-Nitrogen Pyrolyzates: Attempted Preparation of Carbon Nitride
5. Nano‐indentation studies of ultrahigh strength carbon nitride thin films
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2. High Energy Nitrogen Ion-Beam Implantation Induced Nucleation and Crystalline Growth in Amorphous Carbon Nitride Films;2023
3. Anomalous deep ion-induced modification of HOPG;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-11
4. Measurement of elemental composition of carbon and composite ceramic materials using PIXE and RBS methods;Inorganic Materials: Applied Research;2012-05
5. Study of the physical sputtering of a carbon-ceramic composite by ion bombardment;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-04
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