Damaging process of α-SiC under electron irradiation studied with electron microscopy and spectroscopy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Status of silicon carbide composites for fusion
2. Structural freedom, topological disorder, and the irradiation-induced amorphization of ceramic structures
3. Electron-irradiation-induced crystalline to amorphous transition in α-Sic single crystals
4. Formation of Si clusters in electron-irradiated SiC studied by electron energy-loss spectroscopy
5. Amorphization of SiC under ion and neutron irradiation
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2. The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations;Journal of Nuclear Materials;2019-02
3. Structural and defects induced phenomena in γ-rays irradiated 6H-SiC;Radiation Physics and Chemistry;2016-10
4. Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3MeV/amu;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-03
5. Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature;Diamond and Related Materials;2005-03
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