Author:
McHargue C.,Ononye L.C.,Allard L.F.,Alves E.,da Silva M.F.,Soares J.C.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
5 articles.
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1. Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing;Journal of Luminescence;2010-02
2. Comparison of the damage in sapphire due to implantation of boron, nitrogen, and iron;Journal of Nuclear Materials;2009-05
3. Structure and optical properties of sapphire implanted with boron at room temperature and 1000°C;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-09
4. Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04
5. Defect production in nitrogen implanted sapphire;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06