Study of radiation effects on bipolar transistors-Reference-Cited by-同舟云学术

Study of radiation effects on bipolar transistors

Published:2001-08 Issue:3 Volume:179 Page:397-402
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Colder A.,Croitoru N.,D'Angelo P.,De Marchi M.,Fallica G.,Leonardi S.,Levalois M.,Marcolongo S.,Marie P.,Modica R.,Rancoita P.G.,Seidman A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Radiation damage investigation for the design of a hardened fast bipolar monolithic charge sensitive preamplifier

2. Radiation damage study of a fast bipolar monolithic charge sensitive preamplifier

3. Effects of neutron fluences up to 1016 n/cm2 and gamma doses up to 5 Mrad on monolithic fast preamplifiers

4. S. Caruso, et al., RHBIP1 Technology Evaluation to Total Dose, Low Dose Rate and Neutrons, for LHC Experiments and Space Applications, presented at RADECS-97.

5. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

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