Radiation effects on the current–voltage and capacitance–voltage characteristics of advanced p–n junction diodes surrounded by shallow trench isolation-Reference-Cited by-同舟云学术

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Radiation effects on the current–voltage and capacitance–voltage characteristics of advanced p–n junction diodes surrounded by shallow trench isolation

Published:2002-01 Issue:1-4 Volume:186 Page:409-413
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Poyai A.,Simoen E.,Claeys C.,Hayama K.,Kobayashi K.,Ohyama H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. A New Dummy-Free Shallow Trench Isolation Concept for Mixed-Signal Applications

2. Proceedings of the High Purity Silicon VI, PV 2000-17;Poyai,2000

3. K. Hayama, H. Ohyama, K. Kobayashi, A. Poyai, E. Simoen, C. Claeys, Y. Takami, H. Takizawa, A. Mohammadzadeh, in: Proceedings of the RADECS 2000 Workshop, 2000, p. 32

4. Extraction of the minority carrier recombination lifetime from forward diode characteristics

5. Lifetime study in advanced isolation techniques

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1. Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation;IOP Conference Series: Materials Science and Engineering;2013-12-20

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