Ion implantation of silicon carbide-Reference-Cited by-同舟云学术

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Ion implantation of silicon carbide

Published:2002-01 Issue:1-4 Volume:186 Page:186-194
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hallén A,Janson M.S,Kuznetsov A.Yu,Åberg D,Linnarsson M.K,Svensson B.G,Persson P.O,Carlsson F.H.C,Storasta L,Bergman J.P,Sridhara S.G,Zhang Y

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference38 articles.

1. Nitrogen-implanted SiC diodes using high-temperature implantation

2. Nitrogen Ion Implantation into α-SiC Epitaxial Layers

3. Doping of SiC by Implantation of Boron and Aluminum

4. Ion-beam induced damage and annealing behaviour in SiC

5. Damage accumulation and annealing in 6H–SiC irradiated with Si+

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1. A review of silicon carbide CMOS technology for harsh environments;Materials Science in Semiconductor Processing;2024-08

2. Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC;Japanese Journal of Applied Physics;2024-06-03

3. Irradiation performance of high entropy ceramics: A comprehensive comparison with conventional ceramics and high entropy alloys;Progress in Materials Science;2024-06

4. Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC;Power Electronic Devices and Components;2024-04

5. Ion Implanted Modification of Nanomaterials for Semiconductor Devices and Other Applications;Handbook of Emerging Materials for Semiconductor Industry;2024

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