The influence of target temperature and photon assistance on the radiation defect formation in low-fluence ion-implanted silicon-Reference-Cited by-同舟云学术

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The influence of target temperature and photon assistance on the radiation defect formation in low-fluence ion-implanted silicon

Published:2001-04 Issue:3 Volume:174 Page:304-310
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Barabanenkov M.Yu.,Gyulai J.,Leonov A.V.,Mordkovich V.N.,Omelyanovskaya N.M.,Ryssel H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. P. Mazzoldi, G. Arnold (Eds.), Ion Beam Modification of Insulators, Elsevier, Amsterdam, 1987, p. 245

2. Physics of Radiation Effects in Crystals;Vinetskii,1986

3. K.S. Jones, J. Gyulai, in: J.F. Ziegler (Ed.), Ion Implantation – Science and Technology, Ion Implantation Technology Co., New York, 1996, pp. 261–292

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Effects of Protons and Electrons on Backfield Silicon Solar Cells;Journal of Spacecraft and Rockets;2006-05

2. RADIATION EFFECTS OF PROTONS AND ELECTRONS ON BACKFIELD SILICON SOLAR CELLS;PROTECTION OF MATERIALS AND STRUCTURES FROM THE SPACE ENVIRONMENT

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