Multi-layered nanocavities in silicon with sequential helium implantation/anneal-Reference-Cited by-同舟云学术

Multi-layered nanocavities in silicon with sequential helium implantation/anneal

Published:2003-05 Issue: Volume:206 Page:417-421
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Rangan Sanjay,Ashok S.,Chen G.,Theodore D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. The density and pressure of helium in bubbles in implanted metals: A critical review

2. Helium desorption/permeation from bubbles in silicon: A novel method of void production

3. Hydrogen interactions with cavities in helium-implanted silicon

4. Relative free energies of Si surfaces

5. Electrical properties of He-implantation-produced nanocavities in silicon

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