Depth profiling of nitrogen implanted into Si/C and Zr/C bilayers with nuclear reaction analysis-Reference-Cited by-同舟云学术

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Depth profiling of nitrogen implanted into Si/C and Zr/C bilayers with nuclear reaction analysis

Published:2000-03 Issue: Volume:161-163 Page:997-1001
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Miyagawa Y,Nakao S,Wielunski L.S,Hasegawa H,Miyagawa S

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Possibility of carbon nitride formation by low‐energy nitrogen implantation into graphite:Insituelectron spectroscopy studies

2. New carbon nitride phase by high‐dose N ion implantation in glassy carbon

3. Structural properties of carbon nitride films prepared by high dose nitrogen implantation into carbon thin films

4. Behavior of implanted nitrogen in Zr/carbon bilayer

5. Tribological properties of nitrogen implanted diamond-like carbon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen determination by SEM-EDS and elemental analysis;X-Ray Spectrometry;2013-05-23

2. Modification of graphite surface layers by nitrogen ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12

3. Dynamic-sasamal: simulation software for high-dose ion implantation;Surface and Coatings Technology;2002-09

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