Resonant electron tunneling in single quantum well heterostructure junction of electrodeposited metal semiconductor nanostructures using nuclear track filters-Reference-Cited by-同舟云学术

Resonant electron tunneling in single quantum well heterostructure junction of electrodeposited metal semiconductor nanostructures using nuclear track filters

Published:1999-05 Issue:1-4 Volume:151 Page:84-88
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Biswas A.,Avasthi D.K.,Singh Benoy K.,Lotha S.,Singh J.P.,Fink D.,Yadav B.K.,Bhattacharya B.,Bose S.K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Nanomaterials: A Membrane-Based Synthetic Approach

2. Template synthesis of nanoscale materials using the membrane porosity

3. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure

4. The I‐V characteristics of double‐barrier resonant tunneling diodes: Observation and calculation on their temperature dependence and asymmetry

5. Dominant photogenerated valley current in a double‐barrier resonant‐tunneling diode

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