Electronic structures near surfaces of perovskite type oxides
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference15 articles.
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3. Ferroelectricity-modulated resistive switching in Pt/Si:HfO2/HfO2−x/Pt memory;Journal of Semiconductors;2016-08
4. Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells;Applied Physics Letters;2015-07-06
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