Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference38 articles.
1. Physics and Chemistry of III–V Compound Semiconductor Interfaces;Wilmsen,1985
2. A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer
3. Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements
4. Temperature Dependence of Energy Gaps of Some III-V Semiconductors
5. Experimental study on the Er/p‐InP Schottky barrier
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